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| APL602J 600V 43A 0.125 LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). * Higher FBSOA * Popular SOT-227 Package G S D S SO ISOTOP (R) 2 T- 27 "UL Recognized" D * Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 G S All Ratings: TC = 25C unless otherwise specified. APL602J UNIT Volts Amps 600 43 172 30 40 565 4.52 -55 to 150 300 43 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 600 43 0.125 25 (VDS > I D(ON) x R DS(ON) Max, VGS = 12V) 2 Drain-Source On-State Resistance (VGS = 12V, 21.5A) Ohms A Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 100 2 4 nA Volts 8-2003 050-5895 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = 43A @ 25C RG = 0.6 MIN TYP MAX APL602J UNIT 7600 1280 620 13 24 58 14 9000 1810 930 26 48 87 17 ns pF THERMAL CHARACTERISTICS Symbol Characteristic RJC RJA Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W .22 40 2500 10 Volts lb*in VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 3.24mH, R = 25, Peak I = 43A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 ZJC, THERMAL IMPEDANCE (C/W) 0.20 0.9 0.7 0.15 0.5 0.10 0.3 t2 Note: PDM t1 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 RC MODEL Junction temp. ( "C) 0.0520 0.0261F Power (Watts) 0.155 0.423F 8-2003 0.0126 Case temperature 67.451F 050-5895 Rev C FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL Typical Performance Curves 120 ID, DRAIN CURRENT (AMPERES) APL602J 120 VGS=10, 15V ID, DRAIN CURRENT (AMPERES) VGS=10V, 15 V 100 8V 80 7.5 V 60 40 7V 6.5 V 6V 5.5 V 0 100 8V 80 7.5 V 60 7V 40 20 0 6.5 V 6V 5.5 V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW OUTPUT CHARACTERISTICS 1.30 V GS 20 80 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH OUTPUT CHARACTERISTICS NORMALIZED TO = 10V @ 21.5A 1.20 1.10 VGS=10V 60 40 1.00 0.90 VGS=20V 20 TJ = +125C TJ = -55C TJ = +25C 0.80 0.70 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 45 ID, DRAIN CURRENT (AMPERES) 1.15 40 35 30 25 20 15 10 05 0 1.10 1.05 1.00 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 050-5895 Rev C 8-2003 2.5 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) I D 1.2 = 21.5A APL602J VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) V GS = 12V 2.0 1.1 1.0 0.9 1.5 1.0 0.8 0.7 0.6 -50 -25 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 172 100 OPERATION HERE LIMITED BY RDS (ON) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 30,000 100S C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 10,000 5,000 Ciss 10 5 1mS 10mS Coss 1,000 500 Crss 1 TC =+25C TJ =+150C SINGLE PULSE 100mS .1 DC Line 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 8-2003 1.95 (.077) 2.14 (.084) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) 050-5895 Rev C * Source Dimensions in Millimeters and (Inches) Gate ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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